Active Area Uniformity of InxGa1-xAs/InP photodetectors

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Important Dates

Conference:

Aug. 18-20, 2018

Full Paper Due: Jul. 20, 2018

Abstract Due: Jul. 20, 2018

Audience Registration Due:
Aug. 18, 2018

Presentations of The Int'l Symposium on Photonics and Optoelectronics (SOPO 2016)

● Active Area Uniformity of InxGa1-xAs/InP photodetectors
Author(s)
Tie Zhang
Affiliation(s)
Nan Jing University
KEYWORDS
Uniformity, InxGa1-xAs/InP photodetectors
ABSTRACT
The extended wavelength InxGa1-xAs photodetector can cover the short-wavelength infrared range (SWIR 1-3μm) and have been extensively investigated in the past ten years due to their significant applications in environmental research, earth observation, night vision, etc. In order to receive the InxGa1-xAs photodetector with the cut-off wavelength from 1.7μm to higher one, x should increase from 0.53. Many reference report that there exist the large numbers of traps due to the lattice mismatch between the InGaAs absorption layer and substrate layer. On the other hand, for the mesa type photodiodes, not only the bulk defect but mesa edge of the device destroy the optical properties of the detectors. Low surface recombination is obviously one of the prerequisites to reach the low leakage and high efficiencies of mesa-type InGaAs photodiodes.